Si1029x-t1-ge3 sc-89-6 Vishay price advantage
Complementary N- and P-Channel 60 V (D-S) MOSFET
• Compliant to RoHS Directive 2002/95/EC • Power Supply Converter Circuits FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 1.40 P-Channel, 4 • Low Threshold: ± 2 V (typ.) • Fast Switching Speed: 15 ns (typ.) • Gate-Source ESD Protected: 2000 V BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems 
