Suitable for automotive electronic applications
The following results meet AEC-Q100 standard:
Device temperature class: operating environment temperature range from – 40 ° C to+140 ° C
Device human discharge mode (HBM) classification level 2
Device component charging mode (CDM) classification level C6
Two N-channel metal oxide semiconductor field effect transistors (MOSFETs) with high side/low side configurations can be driven through independent inputs
Maximum pilot voltage 120V DC
4A absorption, 4A source output current
0.9 Ω pull-up and pull-down resistance
The input pin can withstand a voltage of – 10V to+20V, independent of the supply voltage range
TTL compatible input
Operating range of 8V to 17V VDD (absolute maximum 20V)
7.2ns rise time and 5.5ns fall time (when 1000pF load is adopted)
Fast propagation delay time (typical value 20ns)
4ns delay matching
Symmetric undervoltage locking function for high side and low side drivers
Industry standard SO-PowerPAD SOIC-8 packaging
- Rated temperature range from 40 ℃ to+140 ° C
application
Power supply for telecommunication, data communication and commercial use
Half bridge and full bridge converters
Push-pull converter
High voltage synchronous step-down converter
Two switch forward converter
Active clamp forward converter
Class D audio amplifier
explain
UCC27211A-Q1 device driver is based on the popular UCC27201 MOSFET driver; However, the device has significant performance improvement. The peak output pull-up and pull-down current has been increased to 4A pull current and 4A sink current, and the pull-up and pull-down resistance has been reduced to 0.9 Ω. Therefore, it is possible to drive high-power MOSFETs with as little switching loss as possible during the Miller effect platform conversion of MOSFETs.
The input structure can directly handle - 10 VDC, which improves robust durability and allows direct connection to the grid drive transformer without the use of rectifier diodes. This input is independent of the supply voltage and has a maximum rating of 20V.
The switching node (HS pin) of UCC27211A-Q1 can handle up to – 18V voltage, thus protecting the high side channel from the negative voltage inherent in parasitic inductance and stray capacitance. UCC27211A-Q1 has added the hysteresis characteristic, so that the interface used for analog or digital pulse width modulation (PWM) controller has enhanced immunity.
The low end and high end gate drivers are independently controlled, and achieve a matching of up to 2ns between each other's ON and OFF.
Since a bootstrap diode with a rated voltage of 120V is integrated on the chip, it is unnecessary to use an external vertical diode. Both high side and low side drivers are equipped with undervoltage locking function, which can provide symmetrical on and off behavior, and can force the output to low level when the drive voltage is lower than the specified threshold.
UCC27211A-Q1 device is packaged with 8-pin SO PowerPAD.