STB28N60M2 TO-263-3 Field-effect transistor ST original off the shelf
describe
These devices use MDmesh ™ M2 technology developed n-channel power mosfet. Due to their strip layout and improved vertical structure, these devices exhibit low resistance and optimized switching characteristics, making them suitable for the most demanding and efficient converters.
feature
Very low gate charge
Excellent output capacitor (COSS) configuration
100% avalanche testing
Zener Protection
application program
Switch applications
These devices use MDmesh ™ M2 technology developed n-channel power mosfet. Due to their strip layout and improved vertical structure, these devices exhibit low resistance and optimized switching characteristics, making them suitable for the most demanding and efficient converters.
feature
Very low gate charge
Excellent output capacitor (COSS) configuration
100% avalanche testing
Zener Protection
application program
Switch applications
LCC converter, Resonant converter
