On fdmt80080dc discrete semiconductor MOS (FET)
FDMT80080DC
Specification information:
Manufacturer: on semiconductor
Product category: MOSFET
RoHS: Yes
Technology: Si
Installation style: SMD / SMT
Package / box: power-33-8
Number of channels: 2 channels
Transistor polarity: n-channel
VDS drain source breakdown voltage: 80 V
ID continuous drain current: 36 A
RDS on drain source on resistance: 1.06 MOhms
VGS th gate source threshold voltage: 3.1 V
VGS - grid source voltage: 20 V
QG gate charge: 195 NC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
PD power dissipation: 156 w
Configuration: Dual
Channel mode: enhancement
Trade name: powertrench
Encapsulation: cut tape
Encapsulation: mousereel
Package: Reel
Height: 0.8 mm
Length: 3.3 mm
Series: fdmt80080dc
Transistor type: 2 n-channel
Width: 3.3 mm
Trademark: on semiconductor / FAIRCHILD
Forward transconductance - Minimum: 116 s
Descent time: 30 ns
Product type: MOSFET
Rise time: 65 NS
Factory packing quantity: 3000
Subcategory: MOSFETs
Typical shutdown delay time: 75 NS
Typical on delay time: 67 NS
Unit weight: 248.520 mg
Specification information:
Manufacturer: on semiconductor
Product category: MOSFET
RoHS: Yes
Technology: Si
Installation style: SMD / SMT
Package / box: power-33-8
Number of channels: 2 channels
Transistor polarity: n-channel
VDS drain source breakdown voltage: 80 V
ID continuous drain current: 36 A
RDS on drain source on resistance: 1.06 MOhms
VGS th gate source threshold voltage: 3.1 V
VGS - grid source voltage: 20 V
QG gate charge: 195 NC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
PD power dissipation: 156 w
Configuration: Dual
Channel mode: enhancement
Trade name: powertrench
Encapsulation: cut tape
Encapsulation: mousereel
Package: Reel
Height: 0.8 mm
Length: 3.3 mm
Series: fdmt80080dc
Transistor type: 2 n-channel
Width: 3.3 mm
Trademark: on semiconductor / FAIRCHILD
Forward transconductance - Minimum: 116 s
Descent time: 30 ns
Product type: MOSFET
Rise time: 65 NS
Factory packing quantity: 3000
Subcategory: MOSFETs
Typical shutdown delay time: 75 NS
Typical on delay time: 67 NS
Unit weight: 248.520 mg