By25d16 Boya flash memory chip IC
Description by25d16 is a 16m bit serial peripheral interface (SPI) flash memory, and supports dual SPI: serial clock, chip selection, serial data I / o0 (SI), I / O1 (so).
The transmission speed of dual output data is 108mbits / s. The device uses a single low-voltage power supply, ranging from 2.7 volts to 3.6 volts.
In addition, the device also supports JEDEC standard manufacturer and device ID.
features
● serial peripheral interface (SPI)
-Standard SPI: SCLK, / CS, Si, so, / WP
-Dual SPI: SCLK, / CS, IO0, IO1, / WP
● reading
-Normal reading (serial): 55mhz clock frequency
-Fast read (serial): 108MHz clock frequency
-Dual reading: 108MHz clock frequency
● program
-Serial input page program, 256 bytes
● erase
-Block erase (64 / 32 KB)
-Sector erase (4KB)
-Chip erase
● program / erase speed
-Page program time: typical 0.7ms
-Sector erase time: usually 100 ms
-Block erase time: typical value is 0.3/0.5s
-Chip erase time: typical 15 seconds
● flexible architecture
-4K byte sector
-32 / 64K byte block
● low power consumption
-20mA active current
-5ua power drop current
● software / hardware write protection
-Enable / disable protection using WP pin
-Write protect all / part of memory through software
-Top or bottom, sector or block selection
● single supply voltage
-Full voltage range: 2.7 ~ 3.6V
● temperature range
-Commercial (0 ° C to + 70 ° C)
-Industrial (- 40 ° C to + 85 ° C)
-Typical 100k program erase cycle on any sector
-Typical 20-year data retention period
The transmission speed of dual output data is 108mbits / s. The device uses a single low-voltage power supply, ranging from 2.7 volts to 3.6 volts.
In addition, the device also supports JEDEC standard manufacturer and device ID.
features
● serial peripheral interface (SPI)
-Standard SPI: SCLK, / CS, Si, so, / WP
-Dual SPI: SCLK, / CS, IO0, IO1, / WP
● reading
-Normal reading (serial): 55mhz clock frequency
-Fast read (serial): 108MHz clock frequency
-Dual reading: 108MHz clock frequency
● program
-Serial input page program, 256 bytes
● erase
-Block erase (64 / 32 KB)
-Sector erase (4KB)
-Chip erase
● program / erase speed
-Page program time: typical 0.7ms
-Sector erase time: usually 100 ms
-Block erase time: typical value is 0.3/0.5s
-Chip erase time: typical 15 seconds
● flexible architecture
-4K byte sector
-32 / 64K byte block
● low power consumption
-20mA active current
-5ua power drop current
● software / hardware write protection
-Enable / disable protection using WP pin
-Write protect all / part of memory through software
-Top or bottom, sector or block selection
● single supply voltage
-Full voltage range: 2.7 ~ 3.6V
● temperature range
-Commercial (0 ° C to + 70 ° C)
-Industrial (- 40 ° C to + 85 ° C)
-Industrial (- 40 ° C to + 105 ° C)
● cycle durability / data retention
-Typical 100k program erase cycle on any sector
-Typical 20-year data retention period