2sk208-gr Toshiba field effect transistor
Toshiba field effect transistor silicon n-channel wiring type, general purpose and application of impedance converter and condenser microphone
High breakdown voltage: vgds = − 50V
• high input impedance: IGSS = − 1.0 Na (value) (VGS = − 30 V)
• low noise: NF = 0.5dB (typical) (RG = 100k Ω, f = 120 Hz)
• small packaging.
Rated value (TA = 25 ° C)
Characteristic symbol rating unit
Gate drain voltage vgds − 50V
Grid current ig10ma
Drain power consumption PD 100 MW
Bonding temperature TJ 125 ° C
High breakdown voltage: vgds = − 50V
• high input impedance: IGSS = − 1.0 Na (value) (VGS = − 30 V)
• low noise: NF = 0.5dB (typical) (RG = 100k Ω, f = 120 Hz)
• small packaging.
Rated value (TA = 25 ° C)
Characteristic symbol rating unit
Gate drain voltage vgds − 50V
Grid current ig10ma
Drain power consumption PD 100 MW
Bonding temperature TJ 125 ° C
Storage temperature range − 55 ~ 125 ° C
