Stp24n60dm2 to-220-3 price advantage
Description
These fdmeshii+ ™ Low QG power MOSFETs and inherent fast recovery body diodes are produced using a new generation of mdmesh ™ Technology: mdmeshii+ ™ Low QG. These revolutionary power modules link the vertical structure with the company's belt layout, producing one of the lowest resistance and gate charges in the world.
Therefore, they are suitable for the most demanding high-efficiency converters, as well as ideal bridge topology and ZVS phase-shift converters. N-channel 600V, 0.175 Ω typ, 18AFDmeshII+ ™ Low QG power MOSFETs in D2Pak, TO-220 and TO-247 software packages
• extremely low gate charge and input capacitance
• the RDS (on) x region is lower than the previous generation
• low grid input resistance
• 100% avalanche test
• Zener protection
• high DV / dt and avalanche capability
application
• Switching Applications
These fdmeshii+ ™ Low QG power MOSFETs and inherent fast recovery body diodes are produced using a new generation of mdmesh ™ Technology: mdmeshii+ ™ Low QG. These revolutionary power modules link the vertical structure with the company's belt layout, producing one of the lowest resistance and gate charges in the world.
Therefore, they are suitable for the most demanding high-efficiency converters, as well as ideal bridge topology and ZVS phase-shift converters. N-channel 600V, 0.175 Ω typ, 18AFDmeshII+ ™ Low QG power MOSFETs in D2Pak, TO-220 and TO-247 software packages
• extremely low gate charge and input capacitance
• the RDS (on) x region is lower than the previous generation
• low grid input resistance
• 100% avalanche test
• Zener protection
• high DV / dt and avalanche capability
application
• Switching Applications