Irfb3607pbf field effect transistor (MOSFET) is original and in stock
IRFB3607PBF
Specification information:
Series: hexfet ®
FET type: n-channel
Technology: MOSFET (metal oxide)
Current - continuous drain (ID) (at 25 ° C): 80A (TC)
Driving voltage (maximum RDSON, minimum RDSON): 10V
VGS (th) at different IDS (max.): 4V @ 100 µ a
Gate charge at different VGS (QG) (maximum): 84nc @ 10V
Input capacitance at different VDS (CISS) (max.): 3070pf @ 50V
VGS (max): ± 20V
Power dissipation (maximum): 140W (TC)
RDSON (max.) with different ID and VGS: 9 milliohm @ 46a, 10V
Operating temperature: - 55 ° C ~ 175 ° C (TJ)
Installation type: through hole
Package / housing: to220
Package: TO-220AB
Polarity: N-ch
Drain source breakdown voltage vdss:75v
Continuous drain current id:80a
Drain source voltage (VDSS): 75V
Supplier's device packaging: TO-220AB
Lead free /rohs: no
Specification information:
Series: hexfet ®
FET type: n-channel
Technology: MOSFET (metal oxide)
Current - continuous drain (ID) (at 25 ° C): 80A (TC)
Driving voltage (maximum RDSON, minimum RDSON): 10V
VGS (th) at different IDS (max.): 4V @ 100 µ a
Gate charge at different VGS (QG) (maximum): 84nc @ 10V
Input capacitance at different VDS (CISS) (max.): 3070pf @ 50V
VGS (max): ± 20V
Power dissipation (maximum): 140W (TC)
RDSON (max.) with different ID and VGS: 9 milliohm @ 46a, 10V
Operating temperature: - 55 ° C ~ 175 ° C (TJ)
Installation type: through hole
Package / housing: to220
Package: TO-220AB
Polarity: N-ch
Drain source breakdown voltage vdss:75v
Continuous drain current id:80a
Drain source voltage (VDSS): 75V
Supplier's device packaging: TO-220AB
Lead free /rohs: no