Lm5111-2mx / NOPB gate driver IC strong shipment
describe
Lm5111 dual gate driver replaces the industry standard gate driver with improved peak output current and efficiency. Each composite output driver stage includes MOS and bipolar transistors working in parallel, which together absorb peaks of more than 5-a from capacitive loads. Combining the unique characteristics of MOS and bipolar devices, the variation of driving current with voltage and temperature is reduced. At the same time, it also provides low-voltage locking protection. The driver can operate in parallel with input and output connections to double the drive current capability. The device is available in the SOIC package or the thermally enhanced msoppowerpad package.
features
• independently drive two n-channel MOSFETs
• composite CMOS and bipolar outputs reduce output current variations
• 5-a receiver and 3-A supply current capability
• two channels can be connected in parallel to double the drive current
• independent input (TTL compatible)
• fast propagation time (typical 25 ns)
• fast rise and fall time (14 ns and 12 ns rise and fall under 2-nf load respectively)
• dual in-phase, dual inverting and combined configurations are available
• supply rail undervoltage lockout protection (UVLO) ƒ • lm5111-4 UVLO is configured to drive pFET through a and nFET through B
• pin compatible with industry standard door
driver
application
• synchronous rectifier grid driver
• switch mode power gate driver
• solenoid valves and motor drivers
Lm5111 dual gate driver replaces the industry standard gate driver with improved peak output current and efficiency. Each composite output driver stage includes MOS and bipolar transistors working in parallel, which together absorb peaks of more than 5-a from capacitive loads. Combining the unique characteristics of MOS and bipolar devices, the variation of driving current with voltage and temperature is reduced. At the same time, it also provides low-voltage locking protection. The driver can operate in parallel with input and output connections to double the drive current capability. The device is available in the SOIC package or the thermally enhanced msoppowerpad package.
features
• independently drive two n-channel MOSFETs
• composite CMOS and bipolar outputs reduce output current variations
• 5-a receiver and 3-A supply current capability
• two channels can be connected in parallel to double the drive current
• independent input (TTL compatible)
• fast propagation time (typical 25 ns)
• fast rise and fall time (14 ns and 12 ns rise and fall under 2-nf load respectively)
• dual in-phase, dual inverting and combined configurations are available
• supply rail undervoltage lockout protection (UVLO) ƒ • lm5111-4 UVLO is configured to drive pFET through a and nFET through B
• pin compatible with industry standard door
driver
application
• synchronous rectifier grid driver
• switch mode power gate driver
• solenoid valves and motor drivers